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LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR
QSE243
PACKAGE DIMENSIONS
0.060 (1.50) 0.174 (4.44)
R 0.030 (0.76) 0.047 (1.20)
0.224 (5.71)
0.177 (4.51)
0.030 (0.76) 0.5 (12.7) MIN
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SCHEMATIC
Collector Emitter
EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) 0.100 (2.54)
NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified.
DESCRIPTION
The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package.
FEATURES
* NPN Silicon Phototransistor with internal base-emitter resistance * Package Type: Sidelooker * Medium Reception Angle, 50 * Clear Plastic Package * Matching Emitter: QEE213
2001 Fairchild Semiconductor Corporation DS300288 9/20/01
1 OF 3
www.fairchildsemi.com
LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR
QSE243
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW
ELECTRICAL / OPTICAL CHARACTERISTICS
Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Saturation Voltage Rise Time Fall Time Light Current Slope(6) Knee Point(5,7) VCE = 15 V, Ee = 0 IC = 100 A Ee = 1 mW/cm2 IC = 0.1 mA(5) VCC = 5 V, RL = 1000 V IC = 1 mA VCE = 5 V, Ee1 = 1 mW/cm2 Ee2 = 0.5 mW/cm2(5) VCE = 5 V
(5)
(TA =25C) Symbol
PS
Test Conditions
Min -- --
Typ 880 25 -- -- -- 15 15
Max -- -- 100 -- 0.4 -- --
Units nm Deg. nA V V s s mA/mW/cm2
ID BVCEO VCE (sat) tr tf ILS Eek
-- 30 -- -- -- 1.0
0.125
mW/cm2
NOTES
1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. = 950 nm, GaAs source 6. The slope is defined by (IC1-IC2) / (EC1-EC2) where IC1 is the collector current at Ee1 and IC2 the collector current at Ee2. 7. Knee point is defined as being required to increase IC to 50 A.
www.fairchildsemi.com
2 OF 3
9/20/01
DS300288
LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR
QSE243
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
DS300288
9/20/01
3 OF 3
www.fairchildsemi.com

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